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2SC4434
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4434 500 400 10 15(Pulse30) 5 120(Tc=25C) 150 -55 to +150 Unit V V V A A W C C
Application : Switching Regulator, Lighting Inverter, and General Purpose
(Ta=25C)
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=8A IC=8A, IB=1.6A IC=8A, IB=1.6A VCE=12V, IE=-1.5A VCB=10V, f=1MHz
External Dimensions MT-100(TO3P)
5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1
2SC4434 100max 100max 400min 10 to 25 0.7max 1.3max 10typ 135typ
Unit
A A
V V MHz pF
20.0min 19.90.3
4.0
a b
o3.20.1
4.0max
V
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4
sTypical Switching Characteristics (Common Emitter)
VCC (V) 200 RL () 25 IC (A) 8 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 1.6 IB2 (A) -3.2 ton (s) 0.5max tstg (s) 2.0max tf (s) 0.15max
5.450.1 B C E
5.450.1
Weight : Approx 6.0g a. Type No. b. Lot No.
IC - VCE Characteristics (Typical)
10
1.2 A
VCE(sat),VBE(sat) - IC Temperature Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at)( V ) Base-Emitter Saturation Voltage V B E (s at)( V) (I C/ I B= 5)
I C - VBE Temperature Characteristics (Typical)
15 14 12 Collector Current I C( A) 10 (VCE=4V)
1A
8 Collector Current I C (A)
600 mA
6
400mA
1
e Temp) 25C (Cas mp) (Case Te 75C
V B E( sat)
) 7 5 C
8
p) Tem se Ca 75 C(
25 C (C ase
emp
(C
VCE(sat) 0 0.05
2
0
0
1
2
3
4
0.1
0.5
1
5
10
0
0
15
0.5 Base-Emittor Voltage V B E( V)
0C
2
15
0
25
(C
C
IB=100 mA
C
4
as
1
ase 50C (C
eT
as
Temp)
Tem
eT
em
4
p)
200m A
6
p)
1.0
Collector-Emitter Voltage V C E( V)
Collector Current I C (A)
(V C E= 4V) 50 75C DC Cur rent Gain h F E 25C
j - a( C/W)
h FE - IC Temperature Characteristics (Typical)
t o n *t s tg *t f ( s)
150C 5
t on *t stg * t f - I C Characteristics (Typical)
j-a - t Characteristics
2
t s tg 1 VCC 200V IC:I B1: -I B 2= 5:1:2 0.5
Transient Thermal Resistance
1
Switching Ti me
0.5
t on 0.1 0.05 0.5 1 tf 5 Collector Current I C( A) 10 15
10
5 0.05
0.1
0.5
1
5
10 15
0.1
1
10 Time t(ms)
100
1000
Collector Current I C( A)
Safe Operating Area (Single Pulse)
40 40
10 0 s
Reverse Bias Safe Operating Area
120
P c - T a Derating
M aximum Power Dissipa ti on P C( W)
100
10 Collect or Cur ren t I C( A) Collector Cur rent I C( A) 5
10 5
W ith In fin ite he at si nk
1 0.5 Without Heatsink Natural Cooling
1 0.5 Without Heatsink Natural Cooling L=3mH IB2=-1A Duty:less than 1%
50
0.1 5 10 50 100 500 Collector-Emitter Voltage V C E( V)
0.1 5
10
50
100
500
3.5 0
Without Heatsink 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E( V)
Ambient Temperature Ta(C)
104

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